IRLR024ZPBFの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRLR024ZPbF MOSFET | Power MOSFET, Transistor Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free
G
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresist |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRL3202PBF | Power MOSFET, Transistor l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniq |
International Rectifier |
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| IRLZ44ZS | AUTOMOTIVE MOSFET PD - 95849
AUTOMOTIVE MOSFET
IRLZ44Z IRLZ44ZS IRLZ44ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ● ●
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 13.5mΩ |
International Rectifier |
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| IRLU024N | (IRLU/R024N) Power MOSFET PD- 91363E
IRLR024N IRLU024N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.065Ω ID = 17A
Description
Fifth Generation HEXFET® Power MOSF |
International Rectifier |
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| IRL520 | Power MOSFET, Transistor Power MOSFET
IRL520, SiHL520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
12
Qgs (nC)
3.0
Qgd (nC)
7.1
Configuration
Single
D
TO-220AB
0.27
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV, dt Ra |
 Vishay |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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