IRGBC40Fの購入情報と機能
| この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRGBC40F Transistor | INSULATED GATE BIPOLAR TRANSISTOR
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PD - 9.691A
IRGBC40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Fast Speed IGBT
VCES = 600V VCE( |
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Features
2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged wi |
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Features
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C
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15V,
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TO-247AC Package Outline
Dimensions are sh |
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| IRG4BC30W-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91790
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Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduct |
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