IRG4PC40UDの購入情報と機能
| この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRGP4062DPBF | (IRGB4062DPBF / IRGP4062DPBF) INSULATED GATE BIPOLAR TRANSISTOR IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Low VCE (ON) Trench IGBT Technology Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA Square RBSOA
G
100% of the parts tested for IL |
![]() International Rectifier |
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| IRG8P15N120KD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR IRG8P15N120KDPbF IRG8P15N120KD-EPbF
VCES = 1200V IC = 15A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 10 s, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 10A
Applications
Industrial Motor Drive UPS Solar Inverters Welding
Features Benchmark Low VC |
![]() International Rectifier |
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| IRGIB7B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead- |
![]() International Rectifier |
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| IRG7PH42UDPbF | INSULATED GATE BIPOLAR TRANSISTOR PD - 97391B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter |
![]() International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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