IRFU9024PBFの購入情報と機能
| この部品の機能は「HEXFET POWER MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF830A | Power MOSFET, Transistor Power MOSFET
IRF830A, SiHF830A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 6.3 11 Single
1.4
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
Low Gate Charge Qg Resu |
Vaishali Semiconductor |
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| IRF7233PBF | HEXFET Power MOSFET PD - 95939
IRF7233PbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
S
1 2 3 4
8 7
A D D D D
S
S G
VDSS = -12V RDS(on) = 0.020Ω
6 5
Description
These P-Channel MOSFETs from International Rectifier utilize advanced |
![]() International Rectifier |
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| IRF5YZ48CM | POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*) PD - 94019A
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
IRF5YZ48CM 55V, N-CHANNEL
Product Summary
Part Number
IRF5YZ48CM BVDSS
55V
RDS(on) 0.029Ω
ID 18A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible |
![]() International Rectifier |
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| IRF520A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.)
Ο
IRF520A
BVDSS = 100 V R |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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