IRFS630Bの購入情報と機能
| この部品の機能は「200V N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFS630B MOSFET | 200V N-Channel MOSFET IRF630B, IRFS630B
IRF630B, IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, |
Fairchild |
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PDF and Buy Now
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 International Rectifier |
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| IRFB17N20D | Power MOSFET(Vdss=200V/ Rds(on)max=0.17ohm/ Id=16A) PD- 93902A
SMPS MOSFET
IRFB17N20D IRFS17N20D IRFSL17N20D
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.17Ω
ID
16A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simpli |
International Rectifier |
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| IRF7780MTRPbF | N-Channel Power MOSFET, Transistor Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC, DC and AC, DC converters DC, AC Inverte |
International Rectifier |
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| IRF9140 | P-CHANNEL POWER MOSFET IRF9140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
HERMETICALLY SEALED TO 3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.5 |
 Seme LAB |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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