IRFP260MPBFの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFP260MPBF MOSFET | Power MOSFET, Transistor PD - 96293
IRFP260MPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free
D VDSS = 200V
RDS(on) = 0.04Ω
G
ID = 50A
S
Description
Fift |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFG9110 | POWER MOSFET THRU-HOLE (MO-036AB) PD - 90397G
POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRFG9110 RDS(on) I D 1.4Ω -0.75A
IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500, 599 100V, QUAD P-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
HEXFET® MOSFET technology is the key to International
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| IRF840P-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
IRF840P-HF-3
N-channel Enhancement-mode Power MOSFET
Ease of Paralleling Simple Drive Requirement Fast Switching Performance RoHS-compliant, Halogen-free G S D
BV DSS RDS(ON) ID
500V 0.85Ω 8A
Description
Advanced Power MOSFETs from APEC provide the designer wi |
 Advanced Power Electronics |
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| IRF1010E | Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A PD - 91670
IRF1010E
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 12mΩ
G S
ID = 84A
Description
Advanced HEXFET® Power MOSFETs from Intern |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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