IRFF112Rの購入情報と機能
| この部品の機能は「Trans MOSFET N-CH 100V 12A 3-Pin TO-39」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFF112R MOSFET | Trans MOSFET N-CH 100V 12A 3-Pin TO-39 |
New Jersey Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF634NS | Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) PD - 94310
Advanced Process Technology Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing tec |
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 Intersil Corporation |
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| IRF7335D1 | Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE PD- 94546
IRF7335D1
Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier
Dual FETKY
Co-Packaged Dual MOSFET Plus Schottky Diode Device Ratings (Typ. |
International Rectifier |
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| IRF5810PbF | Power MOSFET, Transistor l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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