IRFF112の購入情報と機能
| この部品の機能は「Power MOS Field-Effect Transistors」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFF112 Transistor | Power MOS Field-Effect Transistors |
GE Solid State |
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| IRFF112 MOSFET | Trans MOSFET N-CH 100V 12A 3-Pin TO-39 |
New Jersey Semiconductor |
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General Description
IRF630, IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching |
 TAITRON |
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| IRF7314QPBF | Power MOSFET, Transistor PD - 96107A
IRF7314QPbF
Benefits Advanced Process Technology Dual P-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead-Free Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing te |
 International Rectifier |
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| IRF540S | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF540, IRF540S
FEATURES
’Trench’ technology Low on-state resistance Fast switching Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 23 A
g
RDS(ON) ≤ 77 mΩ
s
GENERAL DESCRIPTION
N |
 NXP Semiconductors |
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| IRFZ44NL | (IRFZ44NL / IRFZ44NS) Power MOSFET PD - 94153
Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
IRFZ44NS IRFZ44NL
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.0175Ω
Advanced HEXFET® Power MOSFETs f |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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