IRFF110Rの購入情報と機能

PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize a

PD - 97229 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Rep

Provisional Data Sheet No. PD 9.1287B HEXFET® POWER MOSFET IRFY140CM N-CHANNEL 100 Volt, 0.077 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with hig

PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International