IRFD213の購入情報と機能
| この部品の機能は「(IRFD210) Hexfet Transistors N Channel Hexdip」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF2804LPbF | HEXFET Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon |
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| IRFI4227PBF | HEXFET Power MOSFET PD - 97036A
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repet |
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| IRFS3207ZPBF | (IRFx3207ZPBF) HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF
D
PD - 97213
HEXFET® Power MOSFET
Benefits l Improved Gate, Avalanche and Dynamic dv |
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| IRF9Z24S | Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) PD - 9.912A
IRF9Z24S, L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l l
D
VDSS = -60V RDS(on) = 0.28Ω
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ID = -11A
S
Third Gene |
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