IRFBC20の購入情報と機能
| この部品の機能は「Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFBC20 MOSFET | Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) |
International Rectifier |
|

PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFU3504 | AUTOMOTIVE MOSFET PD - 94499A
AUTOMOTIVE MOSFET
IRFR3504 IRFU3504
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 40V RDS(on) = 9.2mΩ
S
Description
Specificall |
![]() International Rectifier |
![]() |
| IRFIZ48VPbF | Power MOSFET, Transistor l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced process |
![]() International Rectifier |
![]() |
| IRFSL4410ZPbF | HEXFET Power MOSFET IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV, dt
Ruggedness l Fully Characterized Ca |
![]() International Rectifier |
![]() |
| IRFBC20L | Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S, L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv, dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 600V RDS(on) = 4.4Ω
G
ID = |
![]() International Rectifier |
![]() |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|

