IRF830ALの購入情報と機能
| この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF830AL MOSFET | Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) PD- 92006A
SMPS MOSFET
IRF830AS, L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching
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VDSS
500V
RDS(on) max
1.40Ω
ID
5.0A
Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche |
International Rectifier |
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| IRF830AL MOSFET | Power MOSFET, Transistor |
Vishay |
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PDF and Buy Now
関連検索結果
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DirectFET Power MOSFET
l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.3mΩ@ 10V 2.1m� |
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| IRF6603 | HEXFETPower MOSFET PD - 94364E
HEXFET®
l
IRF6603
Power MOSFET
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv, dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
VDSS
30V
RDS(on) max
3.4mΩ |
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| IRF6665PbF | Digital Audio MOSFET PD - 97230A
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Features
Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier
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International Rectifier |
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| IRFZ46ZSPbF | Power MOSFET, Transistor PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing t |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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