IRF7101の購入情報と機能
| この部品の機能は「HEXFET Power MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF7101 MOSFET | HEXFET Power MOSFET
PD - 9.871B
IRF7101
HEXFET® Power MOSFET
Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv, dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = 20V RDS(on) = 0.10Ω ID = 3.5A
3
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International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF8721PBF | Power MOSFET, Transistor
PD - 97119
IRF8721PbF
Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Gate Charge l Low RDS(on) at 4.5V VGS l Low Gate Impedance l Fully Characterized Avalanche Voltage |
International Rectifier |
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| IRF630-006 | Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |  New Jersey Semiconductor |
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| IRF7316QPBF | Power MOSFET, Transistor l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low o |
International Rectifier |
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| IRF540Z | AUTOMOTIVE MOSFET PD - 94758
AUTOMOTIVE MOSFET
IRF540Z IRF540ZS IRF540ZL
HEXFET® Power MOSFET
D
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 100V RDS(on) = 26.5mΩ
S
Description
Sp |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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