IRF6716MPBFの購入情報と機能

l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Common Drain Configuration l Lead-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

PD - 97226A DirectFET Power MOSFET RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications l Low Conduction Losses l

PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanc

PD - 90614 REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE) Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α IRFAE30 800V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transisto