IRF650の購入情報と機能
| この部品の機能は「200V N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF650 MOSFET | 200V N-Channel MOSFET IRF650B , IRFS650B
IRF650B , IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFZ24NSPBF | HEXFET Power MOSFET
PD - 95147
IRFZ24NS, LPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.07Ω
G
ID = 17A
S
Description
Absolut |
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| IRFS4310 | Power MOSFET, Transistor Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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Ruggedness l Fully Characterized Capacita |
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| IRF5Y3205CM | POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.022ohm/ Id=18A*) PD - 94179A
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
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Product Summary
Part Number
IRF5Y3205CM BVDSS
55V
RDS(on) 0.022Ω
ID 18A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possib |
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| IRFU9110PBF | HEXFET Power MOSFET PD - 95324A
IRFR9110PbF IRFU9110PbF
Lead-Free
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1
12, 14, 04
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Peak Diode Recovery dv, dt Test Circuit
+
Ci |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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