IRF620Sの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF620S MOSFET | Power MOSFET, Transistor IRF620S, SiHF620S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.0 7.9 Single
D
FEATURES
200 0.80
Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV, dt Ratin |
Vishay Siliconix |
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DIGITAL AUDIO MOSFET
Features
Key parameters optimized for Class-D audio amplifier applications Low RDSON for improved efficiency Low QG and QSW for better THD and improved efficiency Low QRR for better THD and lower EMI 175°C operating junction temperature for ruggedness Can de |
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Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC
VDS Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ. Low RDS(on) for improved efficiency Low Qg for better THD and improved eff |
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| IRF7555 | Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) PD -91865B
IRF7555
HEXFET® Power MOSFET
Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel
q
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V RDS(on) = 0.055Ω
3
6
4
5
T o p V ie w
Description
Ne |
International Rectifier |
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| IRF6618TRPbF | Power MOSFET, Transistor l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv, dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
PD - 97240 |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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