IRF5210LPBFの購入情報と機能
| この部品の機能は「HEXFET Power MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF5210LPBF MOSFET | HEXFET Power MOSFET PD - 97049A
IRF5210SPbF IRF5210LPbF
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S, L P-Channel Lead-Free
D
VDSS = -100V RDS |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF5804 | Power MOSFET(Vdss=-40V) PD - 94333
IRF5804
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-40V
RDS(on) max (mΩ)
198@VGS = -10V 334@VGS = -4.5V
ID
-2.5A -2.0A
Description
These P-channel HEXFET® Power MOSFETs from International Re |
International Rectifier |
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| IRFZ46 | Power MOSFET, Transistor | International Rectifier |
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| IRFS730B | 400V N-Channel MOSFET IRF730B, IRFS730B
November 2001
IRF730B, IRFS730B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st |
 Fairchild |
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| IRFP360LC | Power MOSFET, Transistor
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PD - 9.1230
IRFP360LC
HEXFET ® Power MOSFET
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv, dt Rated Repetitive Avalanche Rated Description
This new seri |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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