IRF3710ZPBFの購入情報と機能
| この部品の機能は「HEXFET Power MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF3710ZPbF MOSFET | HEXFET Power MOSFET PD - 95466
AUTOMOTIVE MOSFET
IRF3710ZPbF
IRF3710ZSPbF
Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv, dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free
Description Specifically designed fo |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF7241PbF | Power MOSFET, Transistor ● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free
VDSS
-40V
PD - 95294
IRF7241PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
8
A D
New trench HEXFET® Power MOSFETs from S |
International Rectifier |
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| IRFS7440PBF | Power MOSFET, Transistor StrongIRFET
Applications
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Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC, DC and AC, DC converters |
International Rectifier |
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| IRFY1310M-T257 | N-CHANNEL POWER MOSFET
IRFY1310M-T257
MECHANICAL DATA Dimensions in mm (inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045)
N CHANNEL POWER MOSFET FOR HI REL APPLICATIONS
VDS ID(max) RDS(on)
FEATURES
16.38 (0.645) 16.89 (0.665)
13.38 (0.527) 13.64 (0.537)
3.56 (0.140) Dia. 3.81 ( |
 Seme LAB |
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| IRFP250NPBF | Power MOSFET, Transistor PD - 95007A
IRFP250NPbF
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Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFET
D
VDSS = 200V RDS(on) = 0.075Ω
G S
ID = 30A
Description
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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