IRF3515LPBFの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF2807S | HEXFET Power MOSFET PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
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HEXFET® Power MOSFET
D
IRF2807S IRF2807L
VDSS = 75V RDS(on) = 13mΩ
G S
ID = 82A
Advanced HEXFET® Power MOSFETs fro |
![]() International Rectifier |
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| IRFS3806PBF | Power MOSFET, Transistor PD - 97310
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFB3806PbF IRFS3806PbF IRFSL3806PbF
HEXFET® Power MOSFET
D
Benefits l Improved Gate, Avalanche and Dynamic dv, dt |
![]() International Rectifier |
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| IRFU7546PbF | Power MOSFET, Transistor Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC, DC and AC, DC converters DC, AC inverte |
![]() International Rectifier |
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| IRF1404ZGPBF | Power MOSFET, Transistor PD - 96236A
IRF1404ZGPbF
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 3.7mΩ
G S
Description
This HEXFET® Po |
![]() International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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