HFD4N50の購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| HFD4N50 MOSFET | N-Channel MOSFET HFD4N50_HFU4N50
July 2005
HFD4N50 , HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ID = 2.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Cha |
SemiHow |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| HFD1N70 | N-Channel MOSFET HFD1N70 , HFU1N70
Dec 2008
HFD1N70 , HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivall |
SemiHow |
|
| HFDOM40S6Rxxx | 40Pin Flash Disk Module HANBit
HFDOM40S6Rxxx
40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface
1. PRODUCT OVERVIEW
GENERAL DESCRIPTION
The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and |
 Hanbit Electronics |
|
| HFD5N60S | N-Channel MOSFET HFD5N60S_HFU5N60S
Sep 2009
HFD5N60S , HFU5N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 2.0 ID = 4.3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled |
SemiHow |
|
| HFD3020 | TTL Output Receiver m o HFD3020 .c U 4 t e e h S a at .D w w w
TTL Output Receiver
FEATURES Converts fiber optic input signals to TTL digital outputs Typical sensitivity 500 nW peak (-33 dBm) Single 5 V supply requirement Edge detection circuitry gives 20 dB minimum dynamic range, low Pulse Width Distortion Oper |
 Honeywell |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|