FMVC48の購入情報と機能
| この部品の機能は「Thru-hole Hcmos/ttl Compatible 5.0 VDC 5.0 VDC」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FMV11N90E | N-CHANNEL SILICON POWER MOSFET
FMV11N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability
FUJI |
![]() Fuji Electric |
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| FMV16N60E | N-CHANNEL SILICON POWER MOSFET
FMV16N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI |
![]() Fuji Electric |
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| FMV21N50ES | N-CHANNEL SILICON POWER MOSFET
FMV21N50ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
FU |
![]() Fuji Electric |
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| FMV03N60E | N-CHANNEL SILICON POWER MOSFET
FMV03N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI |
![]() Fuji Electric |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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