FM27C512Q90の購入情報と機能
| この部品の機能は「524/288-Bit (64K x 8) High Performance CMOS EPROM」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FM2G200US60 | Molding Type Module FM2G200US60
IGBT
FM2G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power su |
Fairchild Semiconductor |
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| FM27C512NE150 | 524/288-Bit (64K x 8) High Performance CMOS EPROM FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
January 2000
FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
General Description
The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s prop |
Fairchild Semiconductor |
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| FM27C512VE120 | 524/288-Bit (64K x 8) High Performance CMOS EPROM FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
January 2000
FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
General Description
The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s prop |
Fairchild Semiconductor |
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| FM28V100 | 1Mbit Bytewide F-RAM Memory
Preliminary
FM28V100
1Mbit Bytewide F-RAM Memory Features
1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion (1014) Read, Writes NoDelay™ Writes Page Mode Operation to 33MH- Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Mod |
![]() Ramtron |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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