FGA70N33BTDの購入情報と機能
| この部品の機能は「70A PDP IGBT」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FGA70N33BTD IGBT | 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT
FGA70N33BTD
330V, 70A PDP IGBT
Features
High current capability Low saturation voltage: VCE(sat) =1.7V @ IC = 70A High input impedance Fast switching RoHS Compliant
Applications
PDP System
August 2011
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General Description
Using Novel Trench IGBT Technology, F |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FGAF40N60SMD | Field Stop IGBT FGAF40N60SMD 600 V 40 A Field Stop IGBT
May 2013
FGAF40N60SMD
600 V, 40 A Field Stop IGBT
Features
Maximum Junction Temperature : TJ = High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Swiching: EOFF = 6.5 uJ, A Tightened Parameter D |
Fairchild Semiconductor |
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| FGA40N65SMD | 40A Field Stop IGBT FGA40N65SMD 650 V, 40 A Field Stop IGBT
FGA40N65SMD
650 V, 40 A Field Stop IGBT
Features
Maximum Junction Temperature : TJ = 175oC Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A Fast Switching : |
Fairchild Semiconductor |
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| FGA120N30D | 300V PDP IGBT
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the |
Fairchild Semiconductor |
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| FGA180N33AT | 180A PDP Trench IGBT FGA180N33AT 330V, 180A PDP Trench IGBT
April 2008
FGA180N33AT
330V, 180A PDP Trench IGBT
Features
High Current Capability Low saturation voltage: VCE(sat) =1.03V @ IC = 40A High input impedance RoHS compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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