FDZ493Pの購入情報と機能
| この部品の機能は「P-Channel 2.5V Specified PowerTrench BGA MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDZ298N | N-Channel 2.5 V Specified PowerTrench BGA MOSFET FDZ298N
February 2004
FDZ298N
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in |
Fairchild Semiconductor |
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| FDZ4670S | N-Channel PowerTrench SyncFET FDZ4670S N-Channel PowerTrench® SyncFET TM
March 2008
FDZ4670S
N-Channel PowerTrench® SyncFET TM
30V, 25A, 2.4mΩ
tm
Features
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A Ultra-thin package: less than 0.85mm height when mounted to
PCB
Outstand |
Fairchild Semiconductor |
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| FDZ1905PZ | Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
July 2008
FDZ1905PZ
Common Drain P-Channel 1.5V
20V, 3A, 123mΩ
Features
Max rS1S2(on) = 126mΩ at VGS = 4.5V, IS1S2 = 1A Max rS1S2(on) = 141mΩ at VGS = 2.5V, IS1S2 = 1A Max rS1S2(on) = 198mΩ at VGS = 1.8V, IS1S2 = |
Fairchild Semiconductor |
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| FDZ7296 | 30V N-Channel PowerTrench BGA MOSFET FDZ7296
November 2004
FDZ7296
30V N-Channel PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology whic |
Fairchild Semiconductor |
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