FDZ209Nの購入情報と機能
| この部品の機能は「60V N-Channel PowerTrench BGA MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDZ391P | Thin WL-CSP MOSFET FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
September 2008
FDZ391P P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET
-20 V, -3 A, 85 mΩ Features General Description
Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A Max rDS(on) = 200 mΩ |
Fairchild Semiconductor |
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| FDZ197PZ | -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
June 2009
FDZ197PZ
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -3.8 A, 64 mΩ
Features
Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A Max rDS(on) = |
Fairchild Semiconductor |
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| FDZ2551N | Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET FDZ2551N
November 1999 ADVANCE INFORMATION
FDZ2551N
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA M |
Fairchild Semiconductor |
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| FDZ299P | P-Channel 2.5 V Specified PowerTrench BGA MOSFET FDZ299P
February 2004
FDZ299P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in |
Fairchild Semiconductor |
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