FDZ193Pの購入情報と機能
| この部品の機能は「P-Channel 1.7V PowerTrench WL-CSP MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDZ293P | P-Channel 2.5 V Specified PowerTrench BGA MOSFET FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Feb 2006
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(o |
Fairchild Semiconductor |
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| FDZ3N513ZT | 30V Integrated NMOS And Schottky Diode t.in
FDZ3N513ZT Integrated NMOS and Schottky Diode
July 2010
FDZ3N513ZT
Integrated NMOS and Schottky Diode
Features
Monolithic NMOS and Schottky Diode Ultra-small form factor 1mm x 1mm WLCSP Max rDS(on) = 462 mΩ at VGS = 4.5 V, ID = 0.3 A Max rDS(on) = 520 mΩ at VGS = 3.2 V, ID = 0.3 A HBM |
Fairchild Semiconductor |
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| FDZ202P | P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET FDZ202P
November 1999 ADVANCE INFORMATION
FDZ202P
P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodie |
Fairchild Semiconductor |
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| FDZ2552P | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET FDZ2552P
November 1999 ADVANCE INFORMATION
FDZ2552P
Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON). This dual BGA M |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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