FDS8984の購入情報と機能
| この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDS9958_F085 | Dual P-Channel PowerTrench MOSFET FDS9958_F085 Dual P-Channel PowerTrench® MOSFET
November 2008
FDS9958_F085
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified to AEC Q101 RoHS Complia |
Fairchild Semiconductor |
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| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor August 1997
FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to pr |
Fairchild Semiconductor |
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| FDS8962C | Dual N & P-Channel PowerTrench MOSFET
FDS8962C Dual N & P-Channel PowerTrench® MOSFET
June 2006
FDS8962C Dual N & P-Channel PowerTrench® MOSFET
Features
- Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V - Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V |
Fairchild Semiconductor |
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| FDS9431A_F085 | P-Channel 2.5V Specified MOSFET FDS9431A_F085 P-Channel 2.5V Specified MOSFET
FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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