FDP6030BLの購入情報と機能
| この部品の機能は「N-Channel Logic Level PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDPF14N30 | N-Channel MOSFET
FDP14N30 , FDPF14N30 300V N-Channel MOSFET
FDP14N30 , FDPF14N30
300V N-Channel MOSFET Features
14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V Low gate charge ( typical 18 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv, dt capability
UniFET
Description
February 2 |
Fairchild Semiconductor |
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| FDP15N65 | N-Channel MOSFET
FDP15N65 , FDPF15N65 650V N-Channel MOSFET
February 2006
UniFET
FDP15N65 , FDPF15N65
650V N-Channel MOSFET Features
15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V Low gate charge ( typical 48.5 nC) Low Crss ( typical 23.6 pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
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Fairchild Semiconductor |
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| FDP8896 | N-Channel PowerTrench MOSFET FDP8896
N May 2008
FDP8896
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for |
Fairchild Semiconductor |
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| FDP053N08B | N-Channel PowerTrench MOSFET FDP053N08B N-Channel PowerTrench® MOSFET
FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
June 2014
Features
RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 62.5 nC Soft Reverse-Recovery Body Diode Enables High Efficien |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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