FDP3672の購入情報と機能
| この部品の機能は「N-Channel PowerTrench MOSFET 105V/ 41A/ 33m」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDP3672 MOSFET | N-Channel PowerTrench MOSFET 105V/ 41A/ 33m FDP3672
September 2003
FDP3672
N-Channel PowerTrench® MOSFET 105V, 41A, 33mΩ
Features
r DS(ON) = 25mΩ (Typ.), VGS = 10V, ID = 41A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pu |
Fairchild Semiconductor |
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| FDP2670 | 200V N-Channel PowerTrench MOSFET FDP2670, FDB2670
November 2001
FDP2670, FDB2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC, DC converter application. Any application requiring a 200V MOSFETs with low on-resistance |
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| FDPF10N60NZ | N-Channel UniFET II MOSFET FDP10N60NZ , FDPF10N60NZ N-Channel UniFETTM II MOSFET
November 2013
N-Channel UniFETTM II MOSFET
600 V, 10 A, 750 mΩ Features
RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A Low Gate Charge (Typ. 23 nC) Low Crss (Typ. 10 pF) 100% Avalanche Tested Improved dv, dt Capability ESD Improved Ca |
Fairchild Semiconductor |
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| FDP12N60NZ | N-Channel MOSFET FDP12N60NZ , FDPF12N60NZ N-Channel UniFETTM II MOSFET
March 2013
FDP12N60NZ , FDPF12N60NZ
N-Channel UniFETTM II MOSFET
600 V, 12 A, 650 m Features
RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A Low Gate Charge ( Typ. 26 nC) Low Crss ( Typ. 12 pF) 100% Avalanche Tested Improved dv, dt Capabi |
Fairchild Semiconductor |
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| FDP6644 | 30V N-Channel PowerTrench MOSFET FDP6644, FDB6644
June 2001
FDP6644, FDB6644
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature f |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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