FDP3205の購入情報と機能
| この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDP3205 MOSFET | N-Channel PowerTrench MOSFET FDP3205 N-Channel PowerTrench® MOSFET
May 2008
FDP3205
Features
N-Channel PowerTrench® MOSFET
55V, 100A, 7.5mΩ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDP61N20 | N-Channel MOSFET FDP61N20 200V N-Channel MOSFET
September 2005
UniFET
FDP61N20
200V N-Channel MOSFET Features
61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V Low gate charge ( typical 58 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel e |
Fairchild Semiconductor |
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| FDPF39N20 | N-Channel MOSFET FDP39N20 , FDPF39N20 200V N-Channel MOSFET
March 2007
FDP39N20 , FDPF39N20
200V N-Channel MOSFET Features
39A, 200V, RDS(on) = 0.066Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 57 pF) Fast switching 100% avalanche tested Improved dv, dt capability
UniFET
Description |
Fairchild Semiconductor |
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| FDP3652 | N-Channel PowerTrench MOSFET 100V/ 61A/ 16m FDB3652 , FDP3652 , FDI3652
October 2002
FDB3652 , FDP3652 , FDI3652
N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ
Features
r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pu |
Fairchild Semiconductor |
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| FDPF12N50T | N-Channel MOSFET FDP12N50 , FDPF12N50T N-Channel UniFETTM MOSFET
FDP12N50 , FDPF12N50T
N-Channel UniFETTM MOSFET
500 V, 11.5 A, 650 mΩ
Features
RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A Low Gate Charge (Typ. 22 nC) Low Crss (Typ. 11 pF) 100% Avalanche Tested RoHS Compliant
Applications
LCD, LED, PDP |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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