FDMS9620Sの購入情報と機能
| この部品の機能は「30V Dual N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS8672AS | N-Channel MOSFET FDMS8672AS N-Channel PowerTrench® SyncFETTM
November 2007
FDMS8672AS
N-Channel PowerTrench SyncFET
30V, 28A, 5.0mΩ
Features
Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 18A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rDS(on) and high efficiency |
Fairchild Semiconductor |
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| FDMS86252 | N-Channel MOSFET FDMS86252 N-Channel PowerTrench® MOSFET
August 2010
FDMS86252
N-Channel PowerTrench® MOSFET
150 V, 16 A, 51 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-st |
Fairchild Semiconductor |
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| FDMS8320LDC | N-Channel Dual Cool Power Trench MOSFET FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET
October 2012
FDMS8320LDC
N-Channel Dual CoolTM Power Trench® MOSFET
40 V, 130 A, 1.1 mΩ
Features
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A Advanced Package and Silicon combination fo |
Fairchild Semiconductor |
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| FDMS8888 | N-Channel PowerTrench MOSFET FDMS8888 N-Channel PowerTrench® MOSFET
July 2011
FDMS8888
NNNN
N-Channel PowerTrench® MOSFET
30 V, 21 A, 9.5 m:
Features
General Description
Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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