FDMS8680の購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMC7678 | N-Channel Power Trench MOSFET FDMC7678 N-Channel Power Trench® MOSFET
FDMC7678
N-Channel Power Trench® MOSFET
30 V, 19.5 A, 5.3 mΩ
Features
Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and |
Fairchild Semiconductor |
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| FDMF6821B | High-Frequency DrMOS Module FDMF6821B Extra-Small, High-Performance, High-Frequency DrMOS Module
October 2012
FDMF6821B Extra-Small, High-Performance, High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6 mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized System Eff |
Fairchild Semiconductor |
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| FDMC2610 | N-Channel UltraFET Trench MOSFET
FDMC2610 N-Channel UltraFET Trench® MOSFET
September 2006
FDMC2610 N-Channel UltraFET Trench® MOSFET
200V, 9.5A, 200mΩ Features General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power man |
Fairchild Semiconductor |
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| FDME1034CZT | Complementary PowerTrench MOSFET
FDME1034CZT Complementary PowerTrench® MOSFET
December 2009
FDME1034CZT
Complementary PowerTrench® MOSFET
N-channel: 20 V, 3.4 A, 66 mΩ P-channel: -20 V, -2.3 A, 142 mΩ Features General Description
Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ |
Fairchild Semiconductor |
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