FDMS86368の購入情報と機能
| この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS86368 MOSFET | N-Channel PowerTrench MOSFET FDMS86368_F085 N-Channel PowerTrench® MOSFET
FDMS86368_F085
N-Channel PowerTrench® MOSFET
80 V, 80 A, 4.5 mΩ
December 2014
Features
Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applica |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86520 | N-Channel MOSFET FDMS86520 N-Channel PowerTrench® MOSFET
October 2012
FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using eith |
Fairchild Semiconductor |
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| FDMF6707V | High-Frequency DrMOS Module FDMF6707V Extra-Small High-Performance, High-Frequency DrMOS Module
June 2012
FDMF6707V Extra-Small, High-Performance, High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized System Efficie |
Fairchild Semiconductor |
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| FDMB506P | P-Channel 1.8V Logic Level PowerTrench MOSFET FDMB506P
December 2005
FDMB506P
P-Channel 1.8V Logic Level PowerTrench MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge |
Fairchild Semiconductor |
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| FDMS86105 | N-Channel Power Trench MOSFET FDMS86105 N-Channel PowerTrench® MOSFET
January 2011
FDMS86105
N-Channel PowerTrench® MOSFET
100 V, 26 A, 34 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-s |
Fairchild Semiconductor |
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