FDMS3600Sの購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS3600S MOSFET | MOSFET, Transistor FDMS3600S PowerTrench® Power Stage
FDMS3600S
PowerTrench® Power Stage
August 2011
25 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel Max rDS(on) = 1.6 |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS7608S | Dual N-Channel PowerTrench MOSFET FDMS7608S Dual N-Channel PowerTrench® MOSFET
June 2011
FDMS7608S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2 |
Fairchild Semiconductor |
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| FDMS8820 | N-Channel PowerTrench MOSFET FDMS8820 N-Channel PowerTrench® MOSFET
FDMS8820
N-Channel PowerTrench® MOSFET
30 V, 160 A, 2.0 mΩ
Features
Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generati |
Fairchild Semiconductor |
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| FDMS86310 | N-Channel MOSFET FDMS86310 N-Channel PowerTrench® MOSFET
FDMS86310
January 2012
N-Channel PowerTrench® MOSFET
80 V, 50 A, 4.8 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using eit |
Fairchild Semiconductor |
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| FDMS7670AS | N-Channel MOSFET FDMS7670AS N-Channel PowerTrench® SyncFETTM
September 2009
FDMS7670AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 3 mΩ Features General Description
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have b |
Fairchild Semiconductor |
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