FDMC86324の購入情報と機能
| この部品の機能は「N-Channel Power Trench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMC86324 MOSFET | N-Channel Power Trench MOSFET FDMC86324 N-Channel Power Trench® MOSFET
May 2010
FDMC86324
N-Channel Power Trench® MOSFET
80 V, 20 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Descript |
Fairchild Semiconductor |
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Benefits
Fully optimized system efficiency. Higher efficiency levels are achievable compared with conventional discrete components. Space savings of up to 50% PCB versus discrete solutions. Higher fre |
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| FDMS86105 | N-Channel Power Trench MOSFET FDMS86105 N-Channel PowerTrench® MOSFET
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100 V, 26 A, 34 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-s |
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