FDMC8030の購入情報と機能
| この部品の機能は「Dual N-Channel Power MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMC8030 MOSFET | Dual N-Channel Power MOSFET FDMC8030 Dual N-Channel Power Trench® MOSFET
August 2011
FDMC8030
Dual N-Channel Power Trench® MOSFET
40 V, 12 A, 10 mΩ
Features
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A Termination is Lead-fre |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86350 | N-Channel MOSFET FDMS86350 N-Channel PowerTrench® MOSFET
April 2013
FDMS86350
N-Channel PowerTrench® MOSFET
80 V, 80 A, 2.4 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-sta |
Fairchild Semiconductor |
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| FDMS86101 | N-Channel MOSFET FDMS86101 N-Channel PowerTrench® MOSFET
October 2012
FDMS86101
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-s |
Fairchild Semiconductor |
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| FDMS7676 | N-Channel MOSFET FDMS7676 N-Channel PowerTrench® MOSFET
July 2009
FDMS7676
N-Channel PowerTrench® MOSFET
30 V, 5.5 m: Features
Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A Advanced Package and Silicon design for low rDS(on) and high efficiency Next generation e |
Fairchild Semiconductor |
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| FDMS86520L | N-Channel MOSFET FDMS86520L N-Channel PowerTrench® MOSFET
April 2011
FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using eith |
Fairchild Semiconductor |
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