FDFC3N108の購入情報と機能
| この部品の機能は「N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDFC3N108 MOSFET | N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode FDFC3N108
January 2004
FDFC3N108
N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode
General Description
This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDFS6N303 | N-Channel MOSFET with Schottky Diode October 2001
FDFS6N303 N-Channel MOSFET with Schottky Diode
General Description
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated insid |
Fairchild Semiconductor |
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| FDFC2P100 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
October 2006
FDFC2P100
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20V, -3A, 150mΩ Features
Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gate Char |
Fairchild Semiconductor |
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| FDFMA2P859T | Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFMA2P859T
20 V, 3.0 A, 120 m: Features
MOSFET:
Max rDS(on) = 120 m: at VGS = 4.5 V, ID = 3.0 A Max rDS(on) = 160 m: at VGS = 2.5 V, ID = 2.5 A Max rDS(on) = 240 m: at VGS = 1.8 V, ID = 1.0 A
July 2009
Integrated |
Fairchild Semiconductor |
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| FDFS2P103 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFS2P103
September 2001
FDFS2P103
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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