FDD8426Hの購入情報と機能
| この部品の機能は「Dual P and N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDD8426H MOSFET | Dual P and N-Channel MOSFET FDD8426H Dual N & P-Channel PowerTrench® MOSFET
September 2009
FDD8426H
Dual N & P-Channel PowerTrench® MOSFET
Features
Q1: N-Channel Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A |
Fairchild Semiconductor |
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MPLEMENTATION
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FDD5810
N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ
Features
RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse , Repeti |
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| FDD8750 | N-Channel MOSFET FDD8750 N-Channel PowerTrench® MOSFET
December 2006
FDD8750 N-Channel PowerTrench® MOSFET
25V, 2.7A, 40mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC, DC converters using either synchronous or conventional switching P |
Fairchild Semiconductor |
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| FDD3670 | 100V N-Channel PowerTrench MOSFET FDD3670
January 2000 ADVANCE INFORMATION
FDD3670
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs featu |
Fairchild Semiconductor |
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| FDD10AN06A0 | N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m FDD10AN06A0
August 2002
FDD10AN06A0
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Former |
Fairchild Semiconductor |
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