FDC642Pの購入情報と機能
| この部品の機能は「P-Channel 2.5V Specified PowerTrenchMOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDC642P MOSFET | P-Channel 2.5V Specified PowerTrenchMOSFET FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superio |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor May 1998
FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especiall |
Fairchild Semiconductor |
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| FDC6308P | Dual P-Channel 2.5V Specified PowerTrench MOSFET FDC6308P
July 1999
FDC6308P
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of |
Fairchild Semiconductor |
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| FDC37N3869-MD | 3.3V SUPER I/O CONTROLLER WITH INFRARED SUPPORT |  ETC |
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| FDC8884 | N-Channel Power Trench MOSFET FDC8884 N-Channel Power Trench® MOSFET
January 2012
FDC8884
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching s |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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