FDB86366_F085の購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDB86366_F085 MOSFET | MOSFET, Transistor FDB86366_F085 N-Channel PowerTrench® MOSFET
FDB86366_F085
N-Channel PowerTrench® MOSFET
80 V, 110 A, 3.6 mΩ
December 2014
Features
Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applicat |
Fairchild Semiconductor |
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|---|---|---|---|
| FDB120N10 | N-Channel MOSFET FDB120N10 N-Channel PowerTrench® MOSFET
FDB120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Curr |
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| FDB38N30U | N-Channel UniFET Ultra FRFET MOSFET FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET
November 2013
FDB38N30U
Features
R
DS(on) =
N-Channel UniFETTM Ultra FRFETTM MOSFET
300 V, 38 A, 120 mΩ Description
UniFETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage MOSFET family based on planar stripe and DMOS techn ology. This MO |
Fairchild Semiconductor |
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| FDB031N08 | N-Channel MOSFET FDB031N08 N-Channel PowerTrench® MOSFET
July 2008
FDB031N08
N-Channel
Features
RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant
75V, 235 |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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