FDB8441の購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDB8441 MOSFET | N-Channel MOSFET FDB8441 N-Channel PowerTrench® MOSFET
August 2006
FDB8441
N-Channel PowerTrench® MOSFET
40V, 80A, 2.5mΩ
Features
Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDB9403_F085 | N-Channel Power Trench MOSFET FDB9403_F085 N-Channel Power Trench® MOSFET
Aug
FDB9403_F085
N-Channel Power Trench® MOSFET
40V, 110A, 1.2mΩ
Features
Typ rDS(on) = 1mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101 G S S G D D
2012
Applications
Au |
Fairchild Semiconductor |
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| FDB6690S | 30V N-Channel PowerTrench SyncFET FDP6690S, FDB6690S
SEPTEMBER 2001
FDP6690S, FDB6690S
30V N-Channel PowerTrench® SyncFET ™
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, |
Fairchild Semiconductor |
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| FDB14AN06LA0 | N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m FDB14AN06LA0 , FDP14AN06LA0
January 2004
FDB14AN06LA0 , FDP14AN06LA0
N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ
Features
r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A Qg(tot) = 24nC (Typ.), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pul |
Fairchild Semiconductor |
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| FDBD-9PF | RIBBON-CABLE LOW-PROFILE FD CONNECTORS |  Hirose Electric |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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