FDB7030Lの購入情報と機能
| この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDB7030L Transistor | N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1998
FDP7030L , FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDBD-25PF | RIBBON-CABLE LOW-PROFILE FD CONNECTORS |  Hirose Electric |
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| FDB8030L | N-Channel Logic Level PowerTrench MOSFET FDP8030L, FDB8030L
November 1999
FDP8030L, FDB8030L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controller |
Fairchild Semiconductor |
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| FDB16AN08A0 | N-Channel PowerTrench MOSFET 75V/ 58A/ 16m FDP16AN08A0 , FDB16AN08A0
July 2002
FDP16AN08A0 , FDB16AN08A0
N-Channel PowerTrench® MOSFET 75V, 58A, 16mΩ
Features
r DS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 58A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qual |
Fairchild Semiconductor |
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| FDB5680 | 60V N-Channel PowerTrench MOSFET FDP5680, FDB5680
July 2000
FDP5680, FDB5680
General Description
60V N-Channel PowerTrenchTM MOSFET
Features
40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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