FCD600N60Zの購入情報と機能
| この部品の機能は「N-Channel SuperFET II MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FCD600N60Z MOSFET | N-Channel SuperFET II MOSFET FCD600N60Z N-Channel SuperFET® II MOSFET
FCD600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ
November 2013
Features
650 V @ TJ = 150°C Typ. RDS(on) = 510 mΩ Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) 100% Avalanche Teste |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FCD5N60 | 600V N-Channel MOSFET FCD5N60, FCU5N60 600V N-Channel MOSFET
July 2006
SuperFET
FCD5N60 , FCU5N60
600V N-Channel MOSFET Features
650V @TJ = 150°C Typ. Rds(on)=0.81Ω Ultra low gate charge (typ. Qg=16nC) Low effective output capacitance (typ. Coss.eff=32pF) 100% avalanche tested
TM
Description
SuperFETTM is, F |
Fairchild Semiconductor |
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| FCD855 | LED Darlington Transistor |  ETC |
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| FCD9N60NTM | N-Channel MOSFET FCD9N60NTM N-Channel MOSFET
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mΩ Features
RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A Ultra Low Gate Charge (Typ.Qg = 17.8nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant
SupreMOSTM
February 2010
Description
The SupreMOS |
Fairchild Semiconductor |
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| FCD4B14 | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features
Sensitive Layer Over a 0.8 m CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 m x 50 m = 500 dpi Pixel Clock: up to 2 MH- Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm Operating Voltage: 3V to 5.5V Naturall |
 ATMEL Corporation |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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