DMP2004Kの購入情報と機能
| この部品の機能は「P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| DMP57D5UFB | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMP57D5UFB
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Low On-Resistance: RDS(ON) ≤ 6Ω @ VGS = -4.0V RDS(ON) ≤ 8Ω @ VGS = -2.5V Very Low Gate Threshold Voltage, ≤ 1.0V Low Input Capacitance Fast Switching Speed |
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| DMP32D5LFA | P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS -30V
RDS(on)
1.5 Ω @ VGS = -4.5V 2.5 Ω @ VGS = -2.5V
ID TA = +25°C
-0.3 A
-0.2 A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power |
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| DMP25H18DLFDE | P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ADVANCED INFORMATION
Product Summary
V(BR)DSS -250V
RDS(ON) max
14Ω @ VGS = -10V 18Ω @ VGS = -3.5V
ID max TA = +25°C
-0.26A
-0.23A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching perfor |
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| DMP2130L | P-CHANNEL ENHANCEMENT MODE MOSFET Product specification
DMP2130L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low RDS(ON): 75 mΩ @VGS = -4.5V 110 mΩ @VGS = -2.7V 125 mΩ @VGS = -2.5V Low Input, Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1, 2 and 3) Qualified to AEC-Q101 Standards for H |
TY Semiconductor |
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