DMN3035LWNの購入情報と機能
| この部品の機能は「DUAL N-CHANNEL ENHANCEMENT MODE MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| DMN3035LWN MOSFET | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET AADDVVAANNCCEEDDI INNFFOORRMMAATITIOONN
DMN3035LWN
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) MAX
35mΩ @ VGS = 10V 45mΩ @ VGS = 4.5V
ID MAX TA = +25°C
5.5A 4.9A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet m |
Diodes |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input, Output Leakage Ultra-Sma |
Diodes |
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| DMN2040LSD | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMN2040LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Dual N-Channel MOSFET Low On-Resistance 26mΩ @ VGS = 4.5V 36mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage |
Diodes |
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| DMN2009LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(ON) max
8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V
ID max TA = +25°C
12A 10A 8A
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Ou |
Diodes |
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| DMN2500UFB4 | N-CHANNEL ENHANCEMENT MODE MOSFET DMN2500UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Pack |
Diodes |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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