D358の購入情報と機能

この部品の機能は「120V, 800mA, NPN Transistor, 2SD358」です。


製品の詳細 ( データシート PDF )

部品番号 部品情報 メーカー PDF / カテゴリー
D358 Transistor120V, 800mA, NPN Transistor, 2SD358

40~70W output for complementary drive
ETC
ETC
datasheet D358 pdf

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関連検索結果

部品番号 部品情報 メーカー PDF
D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier

D35SB10 Thru D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 35 A FEATURES - Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 - High current capacity with small package - Glass passivated chip junc
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D357 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RA
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D35SB80 High Current Glass Passivated Molding Single-Phase Bridge Rectifier

D35SB10 Thru D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 35 A FEATURES - Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 - High current capacity with small package - Glass passivated chip junc
datasheet D35SB80 pdf
D35SB20 High Current Glass Passivated Molding Single-Phase Bridge Rectifier

D35SB10 Thru D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 35 A FEATURES - Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 - High current capacity with small package - Glass passivated chip junc
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