D2125の購入情報と機能
| この部品の機能は「NPN Transistor, 2SD2125」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D2131 | NPN Transistor, 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
2SD2131
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zene |
![]() Toshiba |
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| D2141 | NPN Transistor, 2SD2141 Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE= 0.5A VCB=10V, f=1MH- 2SD2141 10max 20max 330 to 430 1500min 1 |
![]() Allegro Micro Systems |
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| D2161 | NPN Transistor, 2SD2161 DATA SHEET
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and |
![]() NEC |
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| D2102 | NPN Transistor, 2SD2102
2SD2102
Transient Thermal Resistance Thermal resistance θj-c (°C, W)
10
3 TC = 25°C 1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
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Hitachi Semiconductor |
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