D2107の購入情報と機能
| この部品の機能は「NPN Transistor, 2SD2107」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D2107 Transistor | NPN Transistor, 2SD2107 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations |
Renesas |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D2199 | NPN Transistor, 2SD2199 Ordering number : EN3150A
2SB1450 , 2SD2199
SANYO Semiconductors
DATA SHEET
2SB1450 , 2SD2199 PNP , NPN Epitaxial Planar Silicon Transistors
50V, 7A Switching Applications
Features
Surface mount type device making the following possible. - Reduction in the number of manufacturing processes fo |
 Sanyo |
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| D2110 | NPN Transistor, 2SD2110 INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= |
 Inchange Semiconductor |
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| D2131 | NPN Transistor, 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
2SD2131
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zene |
 Toshiba |
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| D2141 | NPN Transistor, 2SD2141 Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE= 0.5A VCB=10V, f=1MH- 2SD2141 10max 20max 330 to 430 1500min 1 |
 Allegro Micro Systems |
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