D2089の購入情報と機能
| この部品の機能は「METAL GATE RF SILICON FET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D2089 Gate | METAL GATE RF SILICON FET TetraFET
D2089UK
METAL GATE RF SILICON FET
MECHANICAL DATA
H
B
4
3
1
G (2 pls)
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W 28V 2GH- SINGLE ENDED
FEATURES
F E
D
2
C (2 p ls)
A
SIMPLIFIED AMPLIFIER DESIGN
GATE DRAIN
PIN 1 PIN 3
SOURCE SOURCE
PIN 2 PIN 4
SUITABLE FOR BROAD BAN |
Seme LAB |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D2053UK | METAL GATE RF SILICON FET TetraFET
D2053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B E D
8 1 7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- PUSH PULL
FEATURES
I P H G
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIR |
Seme LAB |
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| D2020UK-P | METAL GATE RF SILICON FET PR EL IM INA RY
S a MECHANICAL atDATA .D w w w e e h U 4 t
FEATURES
SIMPLIFIED AMPLIFIER DESIGN VERY LOW Crss
m o .c
TetraFET
D2020UK P
METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- SINGLE ENDED
SUITABLE FOR BROAD BAND APPLICATIONS
w
w
w
t a . |
Seme LAB |
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| D20SB100 | D20SB10 - D20SB100 LESHAN RADIO COMPANY
LTD.
D20SB10(RBV2002S) Thru D20SB100(RBV2007S)
FEATURES
Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
This series
is UL listed under the Recognized
Component index,file number E231047 Single-in-line package High current capality with small pa |
 LRC |
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| D2061 | NPN Transistor, 2SD2061 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061
TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES - Low saturation voltage - Excellent DC current gain characteristice
2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCB |
 Jiangsu Changjiang Electronics |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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