D1262Aの購入情報と機能
| この部品の機能は「NPN Transistor, 2SD1262A」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D1262A Transistor | NPN Transistor, 2SD1262A Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching Complementary to 2SB939 and 2SB939A
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
10.0±0.3 1.5±0.1
s Features
q High foward current transfer ratio hFE q High-speed switchin |
Panasonic |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D1212UK | METAL GATE RF SILICON FET
TetraFET
D1212UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls) C G (typ)
2 1
A D
3
E
5
I F
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W 12.5V 500MH- PUSH PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
N
M
H
J
K
SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1 GATE 2
DH
P |
 Seme LAB |
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| D128C | Fixed Inductors Fixed Inductors for Surface Mounting
D128C
Inductance Range: 1.4~47 H
DIMENSIONS
Recommended patterns
12.3 Max.
8.0 Max.
8.0
(Unit: mm)
5.0
7.5 13.0
(Unit: mm)
FEATURES
12.3mm Max. square and 8.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large curre |
 TOKO |
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| D1254 | NPN Transistor, 2SD1254 Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB931
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
1.5±0.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward curr |
 Panasonic Semiconductor |
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| D1213A-02SO | 2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY NENWE PWRPORDOUDCUTCT
Features
IEC 61000-4-2 (ESD): Air ±15kV, Contact ±8kV 2 Channels of ESD Protection Low Channel Input Capacitance of 0.85pF Typical Typically Used at High Speed Ports such as USB 2.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI Totally Lead-Free & Fully RoHS Compliant (Notes |
 Diodes |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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